Nick Holonyak | |
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Born | Zeigler, Illinois, U.S. | November 3, 1928
Died | September 18, 2022 Urbana, Illinois, U.S. | (aged 93)
Alma mater | University of Illinois at Urbana-Champaign; BS 1950, MS 1951, PhD 1954 |
Known for | Invention of the GaAs0.60P0.40 visible light diode laser and LED |
Awards |
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Scientific career | |
Fields | Electrical engineering |
Thesis | Effect of Surface Conditions on Characteristics of Rectifier Junctions (1954) |
Doctoral advisor | John Bardeen |
Nick Holonyak Jr. (/hʌlɒnjæk/ huh-LON-yak; November 3, 1928 – September 18, 2022) was an American engineer and educator. He is noted particularly for his 1962 invention and first demonstration of a semiconductor laser diode that emitted visible light. This device was the forerunner of the first generation of commercial light-emitting diodes (LEDs). He was then working at a General Electric research laboratory near Syracuse, New York. He left General Electric in 1963 and returned to his alma mater, the University of Illinois at Urbana-Champaign, where he later became John Bardeen Endowed Chair in Electrical and Computer Engineering and Physics.[1][2]
Another important step in the development of GaAsyP1–y (or simply GaAsP) LEDs occurred in 1962 when Holonyak and Bevacqua (1962) reported on the emission of coherent visible light from GaAsP p-n junctions at low temperatures (77 K) under pulsed current injection. The emission of coherent light was limited to low temperatures. At room temperature, the devices worked as LEDs and emitted incoherent visible red light. The 1962 publication is considered a milestone in the development of pn-junction LEDs made from III–V semiconductors emitting in the visible wavelength range (Holonyak, 1987).